The characterization of oxides formed on InP,InGaAs,InAlAs and InGaAs/InAlAs heterostructures at 300-500ºC

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DOIResolve DOI: http://doi.org/10.1023/A:1015396204143
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TypeArticle
Journal titleOxidation of metals
Volume57
Issue5-6
Pages427447; # of pages: 21
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Institute for National Measurement Standards
Peer reviewedNo
NPARC number12744875
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Record identifier44c7b966-b576-471f-82d9-9600c111de7f
Record created2009-10-27
Record modified2016-05-09
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