Hysteresis free carbon nanotube thin film transistors comprising hydrophobic dielectrics

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DOIResolve DOI: http://doi.org/10.1063/1.4937223
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TypeArticle
Journal titleApplied Physics Letters
ISSN0003-6951
Volume107
Issue24
Article number243301
SubjectDielectric materials; Hydrophobicity; Hysteresis; Nanotubes; Single-walled carbon nanotubes (SWCN); Thin film transistors; Thin films; Threshold elements; Threshold voltage; Transistors; Device encapsulations; Dielectric stress; Hole conduction; Hysteresis free; Methyl silsesquioxanes; Polyvinylphenol; Threshold gate voltage; Carbon nanotubes
AbstractWe present two examples of carbon nanotube network thin film transistors with strongly hydrophobic dielectrics comprising either Teflon-AF or a poly(vinylphenol)/poly(methyl silsesquioxane) (PVP/pMSSQ) blend. In the absence of encapsulation, bottom gated transistors in air ambient show no hysteresis between forward and reverse gate sweep direction. Device threshold gate voltage and On-current present excellent time dependent stability even under dielectric stress. Furthermore, threshold gate voltage for hole conduction is negative upon device encapsulation with PVP/pMSSQ enabling much improved current On/Off ratio at 0 V. This work addresses two major challenges impeding solution based fabrication of relevant thin film transistors with printable single-walled carbon nanotube channels.
Publication date
PublisherAIP Publishing
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC)
Peer reviewedYes
NPARC number21277404
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Record identifier44d4a5d8-ce21-4260-9dca-394e940bc72e
Record created2016-03-09
Record modified2016-05-09
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