Excitation wavelength dependent photoluminescence in structurally non-uniform Si/SiGe-island heteroepitxial multilayers

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DOIResolve DOI: http://doi.org/10.1063/1.4729077
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TypeArticle
Journal titleJournal of Applied Physics
ISSN0021-8979
Volume111
Issue114313
AbstractIn nanometer-size Si/SiGe-island heteroepitxial multilayers grown on Si(001), low temperature photoluminescence spectra are observed that strongly depend on the excitation wavelength and show a strong correlation with structural properties revealed by transmission electron microscopy. These experimental results can be explained by assuming that the optically created carriers are strongly localized at Si/SiGe island heterointerfaces. We show that electron-hole pairs are generated and recombine within spatial regions mainly defined by the photoexcitation penetration depth, and that the estimated exciton diffusion length is notably short and comparable with the SiGe-island average size.
Publication date
LanguageEnglish
AffiliationMeasurement Science and Standards; Information and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21269051
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Record identifier44fe77a2-3957-4e5a-a078-67449e1d8dd0
Record created2013-12-03
Record modified2016-05-09
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