Magnetotransport coefficients in a two-dimensional SiGe hole gas

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.54.14518
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TypeArticle
Journal titlePhysical Review B
Volume54
Issue20
Pages14518
AbstractMagnetotransport coefficients have been measured, at temperatures down to 30 mK, in a single-side p-doped Si0.₈₈Ge0.₁₂ strained quantum well. Odd filling factors dominate the transport, indicating a large g factor, and the coefficients are found to be extremely insensitive to the in-plane component of magnetic field. An effective mass of (0.30₅±0.01)m0 was deduced from the temperature dependence. The coefficients are discussed in terms of semiclassical transport theory. At low magnetic fields both longitudinal and Hall coefficients could be well explained in this way, in contrast to the situation in GaAs-based heterostructures. Small deviations from theory at higher fields are attributed to localization and Landau-level mixing effects. © 1996 The American Physical Society.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327755
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Record identifier4508c248-9639-4176-8c5a-8620f582b23f
Record created2009-09-10
Record modified2016-05-09
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