Exciton-seeded multiphoton ionization in bulk SiO2

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.81.212301
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TypeArticle
Journal titlePhysical review. B, Condensed matter and materials physics
Volume81
Issue21
Pages212301–; # of pages: 4
AbstractIn a femtosecond pump-probe experiment the pump pulse injects a modest density of free carriers by multiphoton absorption. Measuring the nonlinear absorption of the probe pulse we observe exciton-seeded multiphoton ionization. The excitons self-trap in SiO2 in <300?fs following free-carrier injection and decay biexponentially with lifetimes of 34±8 and 338±67?ps at room temperature. The extent of the probe-pulse absorption provides a model-independent demonstration that avalanche ionization plays a significant role in free-carrier generation by laser pulses as short as 45 fs. Free-carriers injected into a dielectric from extreme-ultraviolet (XUV) sources created by high harmonic or attosecond pulse generation and then avalanched with a perfectly synchronized infrared (fundamental) probe pulse, can provide a route to nanoscale laser machining.
Publication date
LanguageEnglish
AffiliationNRC Steacie Institute for Molecular Sciences; National Research Council Canada
Peer reviewedYes
NPARC number16925482
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Record identifier454e6b34-4268-43aa-9b32-be33e7c7c711
Record created2011-02-25
Record modified2016-05-09
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