Optimization of MOCVD-diffused p-InP for planar avalanche photodiodes

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DOIResolve DOI: http://doi.org/10.1016/j.jcrysgro.2013.09.053
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TypeArticle
Journal titleJournal of Crystal Growth
ISSN0022-0248
AbstractWe investigate the materials properties and dark currents of planar InP/InGaAs avalanche photodiodes (APDs) in which the p-dopant, Zn, is introduced by diffusion in an MOCVD reactor using dimethylzinc (DMZn) as the source. APD dark currents are compared with low-temperature photoluminescence (PL), electrochemical capacitance-voltage (ECV) and secondary ion mass spectroscopy (SIMS) measurements of layers diffused under the same set of conditions. Device dark currents exhibit both surface-related and bulk contributions, with the bulk contribution appearing as a step increase in the current near the punch-through voltage. The bulk dark current contribution depends on the diffusion process parameters and is correlated with the total Zn incorporation and the intensities of the InP and InGaAs PL peaks. A variation of three orders of magnitude is observed in the bulk dark current contribution as diffusion conditions are varied. © 2013.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Canadian Photonics Fabrication Centre (CPFC-CCFDP)
Peer reviewedYes
NPARC number21269745
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Record identifier456522a6-ecd0-4908-b537-6c5bad042da1
Record created2013-12-13
Record modified2016-05-09
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