Low threshold CW operation of circular-grating surface-emitting DBR lasers using MQW and a self-aligned process

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DOIResolve DOI: http://doi.org/10.1109/68.334811
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TypeArticle
Journal titleIEEE Photonics Technology Letters
ISSN10411135
Volume6
Issue11
Pages12801282; # of pages: 3
Subject26 mA; 977 nm; circular-grating surface-emitting DBR lasers; CW operation; CW threshold current; diffraction gratings; gallium arsenide; III-V semiconductors; indium compounds; InGaAs/GaAs strained multiquantum-well; InGaAs-GaAs; lasing wavelength; low threshold CW operation; material system; modified fabrication process; MQW; optical fabrication; quantum well lasers; room temperature continuous wave operation; self-aligned process; surface emitting lasers
AbstractIn this letter, we present the first room temperature continuous wave operation of circular-grating surface-emitting DBR lasers. The structure is an InGaAs/GaAs strained multiquantum-well. A modified fabrication process with a better control on the steps is used. A CW threshold current as low as 26 mA at a lasing wavelength of about 977 mm are reported. This is the first demonstration of CW operation for these lasers in any material system
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
Identifier10456375
NPARC number12327511
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Record identifier45ddce8d-f55e-40be-a2b8-b8d33efd1873
Record created2009-09-10
Record modified2016-05-09
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