Surface passivation of AlGaN/GaN HFETs using AlN layer deposited by reactive magnetron sputtering

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DOIResolve DOI: http://doi.org/10.1002/pssc.200390119
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TypeArticle
Journal titlephysica status solidi (c)
Volume0
Issue1
Pages6973; # of pages: 5
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12744164
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Record identifier46d28c48-6f3a-4a95-8f2c-e06ec2bd0e02
Record created2009-10-27
Record modified2016-05-09
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