Xanes studies of III-V semiconductor surface passivation

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DOIResolve DOI: http://doi.org/10.1016/0079-6816(95)00067-4
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Journal titleProgress in Surface Science
Pages335345; # of pages: 11
AbstractIII-V semiconductor surfaces are known to be very reactive in air due to the presence of unsaturated dangling bonds (DBs). Native oxides are highly undesirable in many device applications. Remarkable progress has been made in recent years in the preparation of air-stable surfaces by wet chemical etching. XANES studies have shown that the stability of the passive surface is due to termination of surface DBs through the formation of an ordered overlayer selfassembled in chemical solutions. For a (100) InP surface, saturation of two adjacent DBs is achieved by the formation of In-S-In bridge bonds along the [011] direction. A refined analysis of σ-resonance indicates that XANES data are consistent with a recently proposed (2×2) InP(100)-S structure where the S is located on bridge sites to form twisted short and long dimers. For the GaAs(111) surface, the surface DBs are terminated by monovalent Ga-Cl bonds along the surface normal. CVD Chemical-vapour deposition DB Dangling bond LEED Low energy electron diffraction NEXAFS Near-edge X-ray absorption line-structure XANES X-ray absorption near-edge structure XPS X-ray photoelectron spectroscopy.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328389
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Record identifier471436bb-afef-4f96-a963-809e06431894
Record created2009-09-10
Record modified2016-05-09
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