AlGaN/GaN HFETs fabricated from maskless selectively grown mesas on Si(111) substrates

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DOIResolve DOI: http://doi.org/10.1049/el:20072039
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TypeArticle
Journal titleElectronics Letters
Volume43
Issue22
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744106
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Record identifier472c588e-2fe9-4c00-80f5-e3d06baa5891
Record created2009-10-27
Record modified2016-05-09
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