Ammonia molecular beam epitaxy growth of p-type GaN and application for bipolar junction transistors

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DOIResolve DOI: http://doi.org/10.1116/1.1926307
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TypeArticle
Journal titleJournal of Vacuum Science & Technology B
Volume23
Issue3
Pages11991203; # of pages: 5
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12743977
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Record identifier4796c023-9c1f-4c46-a6da-9a777e058df5
Record created2009-10-27
Record modified2016-05-09
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