Uniformity of AlGaN/GaN HEMTs Grown by Ammonia-MBE on 2-inch Sapphire Substrate

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DOIResolve DOI: http://doi.org/10.1149/1.1940808
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TypeArticle
Journal titleJournal of The Electrochemical Society
Volume152
Issue8
PagesG660G663
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744369
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Record identifier48c15dac-b6dc-4528-9953-f661aa4e7a05
Record created2009-10-27
Record modified2016-05-09
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