Growth of high mobility AlGaN/GaN heterostructures by ammonia-molecular beam epitaxy

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DOIResolve DOI: http://doi.org/10.1002/(SICI)1521-396X(199911)176:1<243::AID-PSSA243>3.0.CO;2-Y
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TypeArticle
Journal titlePhysica Status Solidi A: Applications and Materials Science
Volume176
Issue1
Pages243246; # of pages: 4
AbstractThe growth of high mobility AlGaN/GaN heterostructures on insulating C-doped GaN base layers by ammonia-molecular beam epitaxy (ammonia-MBE) is reported. The structures were grown using an initial sim300 ? buffer layer of AlN grown by Magnetron Sputter Epitaxy. This was followed by the deposition of GaN and AlGaN epilayers using ammonia-MBE. Semi-insulating C-doped GaN layers with resistivities greater than 106 Omega cm have been obtained using a methane ion source. Room temperature mobilities of up to 1211 cm2/Vs and 77 K mobiltitties of up to 5660 cm2/Vs have been measured for the two-dimensional electron gas in the heterostructures grown. Well-resolved Shubnikov-de Haas oscillations have been observed in the low temperature magnetoresistance measurements.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327269
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Record identifier4a1a58b6-8845-45a1-9b54-3d3f46ccaa1b
Record created2009-09-10
Record modified2016-05-09
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