Thermal stability of nickel silicide films

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DOIResolve DOI: http://doi.org/10.1557/PROC-427-541
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TypeArticle
Proceedings title1996 MRS Spring Meeting - Symposium K – Advanced Metallization for Future ULSI
Series titleMaterials Research Society Symposium Proceedings; no. 427
Conference1996 MRS Spring Meeting: Symposium K: Advanced Metallization for Future ULSI, April 8-12, 1996, San Francisco, CA, USA
ISSN0272-9172
ISBN1558993304
9781558993303
Pages541545; # of pages: 5
AbstractIn view of their potential application in ULSI technology, nickel silicide films were formed on undoped and doped Si(100) substrates. Nickel films of varying thicknesses were sputter-deposited onto the substrates and silicidation was performed ex-situ by rapid thermal annealing in nitrogen ambient. The electrical sheet resistance of the silicides was studied as a function of film thickness and annealing temperature. The process window for forming the NiSi phase and the thermal stability of the NiSi phase were determined as a function of film thickness.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328208
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Record identifier4b112de2-8384-4fda-9c99-b1fc920ebc13
Record created2009-09-10
Record modified2016-05-09
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