Anodic Passivation of p-InP (100) in (NH[sub 4])[sub 2]S[sub x] Solution

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DOIResolve DOI: http://doi.org/10.1149/1.2043966
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TypeArticle
Journal titleJournal of The Electrochemical Society
Volume142
Issue1
PagesL14L16
Subjectanodised layers; dissolving; electrochemistry; III-V semiconductors; passivation; precipitation (physical chemistry); surface composition
Abstractp-InP (100) was electrochemically sulfur passivated in (NH4)2Sx solution, and the resulting surfaces analyzed by XPS, AES, and SEM.It was found that one monolayer of sulfur adsorbed on the InP surface at potentials below 0.3 V (vs. SCE); while at potentials above 0.3 V,a 3-dimensional In2S3 layer was formed. Conditions for preparation of a continuous, 150 nm thick In2S3 passivating layer have beendetermined.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12339060
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Record identifier4b5c9c1f-12a8-490b-ac10-23c00530ba4d
Record created2009-09-11
Record modified2017-03-23
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