Electronic temperatures of terahertz quantum cascade active regions with phonon scattering assisted injection and extraction scheme

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DOIResolve DOI: http://doi.org/10.1364/OE.21.010172
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TypeArticle
Journal titleOptics Express
ISSN1094-4087
Volume21
Issue8
Pages1017210181; # of pages: 10
SubjectActive regions; Electronic temperature; Ground level; Optical phonon scattering; Population ratio; Quantum cascades; Quantum-cascade devices; Resonant phonon; Optical lattices; Quantum well lasers; Phonon scattering; article; equipment; equipment design; equipment failure; light; methodology; radiation scattering; terahertz radiation; thermography; Equipment Design; Equipment Failure Analysis; Light; Scattering, Radiation; Terahertz Radiation; Thermography
AbstractWe measured the lattice and subband electronic temperatures of terahertz quantum cascade devices based on the optical phonon-scattering assisted active region scheme. While the electronic temperature of the injector state (j=4) significantly increases by △T=Te 4 -TL ∼40 K, in analogy with the reported values in resonant phonon scheme (△T ∼70-110 K), both the laser levels (j=2,3) remain much colder with respect to the latter (by a factor of 3-5) and share the same electronic temperature of the ground level (j=1). The electronic population ratio n2/n1 shows that the optical phonon scattering efficiently depopulates the lower laser level (j=2) up to an electronic temperature Te ∼180 K. © 2013 Optical Society of America.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC)
Peer reviewedYes
NPARC number21270585
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Record identifier4c9a4e1b-ce0c-4fed-ac1a-1d87c72fc57e
Record created2014-02-17
Record modified2016-05-09
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