High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy

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DOIResolve DOI: http://doi.org/10.1088/0268-1242/20/8/030
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TypeArticle
Journal titleSemiconductor Science and Technology
Volume20
Issue8
Pages809813; # of pages: 5
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744617
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Record identifier4d22b078-37e6-45eb-9641-d621001ebcae
Record created2009-10-27
Record modified2016-05-09
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