The interaction of atomic deuterium with sulphur passivated InP(100) - (1 x 1)

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DOIResolve DOI: http://doi.org/10.1016/0039-6028(94)90104-X
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TypeArticle
Journal titleSurface Science
Volume318
Issue3
Pages299306; # of pages: 8
AbstractS-passivated InP(100) crystals have been exposed, at various temperatures, to atomic deuterium. The sulphur overlayer is found to be removed by this treatment, with all of the sulphur being removed at sufficiently high exposures. Samples which are dosed at 300 or 400 K yield a D-terminated (1 ? 1) surface, while those exposed at temperatures > 500 K exhibit a (4 ? 2) reconstruction. The surface morphologies of the samples dosed at 300 and 400 K are unchanged from that of the original wafer, while those treated at higher temperatures show the presence of macroscopic In islands.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12327373
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Record identifier4de2e9e0-4a63-47ba-bf52-b961e0ad9560
Record created2009-09-10
Record modified2016-05-09
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