Growth of High Mobility GaN and AlGaN/GaN HFET Structures on 4H-SiC by Ammonia-Molecular-Beam Epitaxy

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DOIResolve DOI: http://doi.org/10.1063/1.1379785
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TypeArticle
Journal titleApplied Physics Letters
Volume78
Issue24
Pages3845
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12328724
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Record identifier51d0bea3-80ff-4cd0-892d-66786be4b20d
Record created2009-09-10
Record modified2016-05-09
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