Lanthanum Monosulfide Thin Films Grown on MgO Substrates for Field Emission

DOIResolve DOI: http://doi.org/10.1109/IVNC.2007.4481019
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EditorSearch for: Busta, H.
TypeArticle
Proceedings titleTechnical Digest of the 20th International Vacuum Nanoelectronics Conference
Conference20th International Vacuum Nanoelectronics Conference
ISBN978-1-4244-1134-4
978-1-4244-1133-7
Pages253254; # of pages: 2
AbstractIn this work and with a view to optimizing their FE properties, LaS films of increased crystallinity were obtained by PLD on lattice matched MgO substrates, at elevated substrate temperatures and in a background gas of H2S. The thin films have been characterized by high resolution transmission electron microscopy, atomic force microscopy (AFM), X-ray diffraction, ellipsometry and Raman spectroscopy. The FE properties of the films have been characterized by scanning anode field emission microscopy.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
IdentifierIEEE Cat 07TH8951
NPARC number12346686
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Record identifier51d2b97d-67ac-49ca-b0c3-c2de0600c2d0
Record created2009-09-17
Record modified2016-05-09
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