The effect of In-flush on the optical anisotropy of InAs/GaAs quantum dots

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DOIResolve DOI: http://doi.org/10.1063/1.3681329
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TypeArticle
Journal titleJournal of Applied Physics
ISSN0021-8979
Volume111
Issue3
Article number033510
AbstractThe effect of the In-flush technique on the optical anisotropy of InAs/GaAs quantum dots(QDs) has been investigated. The anisotropy was deduced from low temperature microluminescence measurements of the splitting of the emission lines related to single neutral excitons confined to the QDs. It was found that the anisotropy was significantly smaller in a structure grown by the In-flush technique as compared to a structure grown without this procedure. It is proposed that this anisotropy reduction is due to the reduction in the strain generated within the GaAs barrier when using the In-flush procedure.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number21269030
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Record identifier52a4c7a9-3513-462e-a2a6-8a0dd7f5af87
Record created2013-12-02
Record modified2016-05-09
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