C60 fullerene nanocolumns - polythiophene heterojunctions for inverted organic photovoltaic cells

  1. Get@NRC: C60 fullerene nanocolumns - polythiophene heterojunctions for inverted organic photovoltaic cells (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1021/am200076m
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Journal titleACS Applied Materials and Interfaces
Pages18871894; # of pages: 8
SubjectBulk heterojunction; Glancing Angle Deposition; Nano-columns; Organic photovoltaics; Poly[3-(4-carboxybutyl)thiophene]; Carboxylic acids; Conversion efficiency; Dimethyl sulfoxide; Dissolution; Fullerenes; Indium compounds; Organic solvents; Oxide films; Photoelectrochemical cells; Photovoltaic cells; Photovoltaic effects; Thiophenes; Tin oxides; Heterojunctions; Fullerene C60; Fullerene derivative; Nanomaterial; Polythiophene; Thiophene derivative; Transmission electron microscopy; Ultrastructure; Polymers
AbstractInverted organic photovoltaic cells have been fabricated based on vertical C60 nanocolumns filled with spin-coated poly[3-(4-carboxybutyl) thiophene- 2,5-diyl] (P3CBT). These C60 nanocolumns were prepared via glancing angle deposition (GLAD), an efficient synthetic approach that controls the morphology of the resulting film, including intercolumn spacing, nanostructure shapes, and overall film thickness, among others. Intercolumn spacing was tuned to better match the expected P3CBT exciton diffusion length while simultaneously increasing heterointerface area. Due to observed in situ dissolution of the C60 nanocolumns in solvents typically used to spin-coat polythiophene-based polymers (i.e., chloroform and chlorobenzene), the carboxylic acid-substituted polythiophene, P3CBT, was used as it is soluble in dimethyl sulfoxide (DMSO), a solvent that did not affect the structure of the GLAD-produced C60 nanostructures. Preservation of the C60 nanocolumnar structure in the presence of DMSO, with and without P3CBT, was verified by absorbance spectroscopy and SEM imaging. Incorporating these nanostructured C60/P3CBT films into photovoltaic devices on indium tin oxide (ITO) showed that the engineered nanomorphology yielded a 5-fold increase in short-circuit current and a power conversion efficiency (PCE) increase from (0.2 ± 0.03)% to (0.8 ± 0.2)% when compared to a planar device. When compared to a standard bulk heterojunction (BHJ) device based upon the same materials, the C60-GLAD device outperformed fully solution-processed bulk heterojunctions, which were observed to have PCEs of (0.49 ± 0.03) %. © 2011 American Chemical Societ.
Publication date
AffiliationNational Research Council Canada (NRC-CNRC); National Institute for Nanotechnology
Peer reviewedYes
NPARC number21271917
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Record identifier52ea3fc8-99b5-45d3-ba0f-86a076a274e6
Record created2014-05-05
Record modified2016-05-09
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