Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation

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DOIResolve DOI: http://doi.org/10.1063/1.3633508
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TypeArticle
Journal titleJournal of Applied Physics
ISSN0021-8979
Volume110
Issue5
Article number54320
SubjectElectron spins; Electronic band structure; Energy separations; Excitation lasers; Excitation wavelength; InAs/GaAs quantum dots; Kerr rotation; Reflectance spectrum; Resonant excitation; Sign-change; Spin orientations; Spin state; Sub-bands; Time-resolved; Band structure; Laser excitation; Magnetic fields; Rotation; Separation; Spin dynamics; Wetting; Semiconductor quantum dots
AbstractElectronic band structures and spin states of the InAs/GaAs quantum dots (QDs) induced by the wetting-layer fluctuation were investigated by employing the technique of time-resolved Kerr rotation (TRKR) with and without magnetic field. Sign change of the Kerr rotation signal was unambiguously observed when only the wavelength of the pump/probe light was scanned. By carefully examining the dependence of TRKR signal on the excitation wavelength and magnetic field as well as photoluminescence and reflectance spectra, the physical origin causing the sign change of the Kerr signal is uncovered. It is due to the resonant excitations of electrons with opposite spin orientations at heavy- (hh) and light-hole (lh) subbands, respectively, since there is a large enough energy separation in QDs for the excitation laser pulses. This measurement also leads to a precise determination of the energy separation between the hh and lh subbands near k 0 point in the dots. © 2011 American Institute of Physics.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21271251
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Record identifier531deb11-0128-407f-a451-54ed2108bb3c
Record created2014-03-24
Record modified2016-05-09
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