Electroluminescence and photoluminescence from Si1-xGex alloys

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DOIResolve DOI: http://doi.org/10.1063/1.104454
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TypeArticle
Journal titleApplied physics letters
ISSN0003-6951
Volume58
Issue9
Pages957958; # of pages: 2
AbstractElectroluminescence has been observed from Si1−xGex/Si p-n heterostructures grown by molecular beam epitaxy and fabricated into mesa diodes. The luminescence from each sample was observed at temperatures up to 80 K with diodes forward biased at current densities up to 50 A/cm2. For x=0.18 and x=0.25, broad (∼80 meV) electroluminescence peaks were observed at 890 and 860 meV, respectively. These energies as well as the peak shapes and quantum efficiencies (∼1%) were the same as those from corresponding photoluminescence spectra.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
Identifier10100234
NRC number1128
NPARC number8897158
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Record identifier533d3cb7-cd4e-4fc5-a752-c44e9edfe1e9
Record created2009-04-22
Record modified2016-05-09
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