Phonons and radiative recombination in self-assembled quantum dots

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.52.5752
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TypeArticle
Journal titlePhysical review. B, Condensed matter and materials physics
Volume52
Issue8
Pages57525755; # of pages: 4
AbstractThe radiative recombination of photocarriers has been studied in various self-assembled InxGa1-xAs/GaAs and AlxIn1-xAs/AlyGa1-yAs quantum dot samples, prepared with the spontaneous island formation during molecular-beam epitaxy. Depending on the relative values of the interlevel spacings and the phonon energies, some structures display strong enhancement of the photoluminescence for excitation energies permitting resonant phonon relaxations, or strong level filling and emission from the excited states with saturation of the ground states at higher excitation intensities.
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LanguageEnglish
Peer reviewedNo
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NPARC number12330042
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Record identifier53bd8f02-743f-4934-98e2-4e1d1b669465
Record created2009-09-10
Record modified2016-05-09
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