Contactless electroreflectance of GaN0.025As0.975-xSbx/GaAs quantum wells with high Sb content (0.27 <= x <= 0.33): the determination of band gap discontinuity

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DOIResolve DOI: http://doi.org/10.1063/1.2370506
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TypeArticle
Journal titleApplied physics letters
ISSN0003-6951
Volume89
Article number171914
AbstractGaN0.025As0.975−xSbx /GaAs quantum wells QWs with x=0.27 and x=0.33 were investigated by contactless electroreflectance CER spectroscopy. CER features related to optical transitions between the ground and excited states were clearly observed, indicating that these QWs have type-I structures. By matching the QW transition energies with those obtained from theoretical calculations performed within the electron effective mass approximation the conduction band offset in these QWs is found to be close to 40%. The resulting conduction band discontinuities were found to be ~200 and ~150 meV for the QWs with x=0.27 and x=0.33, respectively.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number21276876
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Record identifier53e70342-b7f1-4f93-ab24-d8c3daa480a6
Record created2015-10-29
Record modified2016-05-09
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