Reduced carrier lifetimes in reversed biased 1.55 µm InGaAs/InP multiple quantum well laser structures with multiple step confinement regions

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TypeArticle
Proceedings titleCanadian Journal of Physics
ConferenceSeventh Canadian Semiconductor Technology Conference, August 1995, Ottawa, Canada
Volume74
Issuesuppl.
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328290
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Record identifier556b7ffa-8eae-4e07-8ae1-1eb269a723ae
Record created2009-09-10
Record modified2016-05-09
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