Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: a new approach in controlling the bandwidth

Download
  1. Get@NRC: Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: a new approach in controlling the bandwidth (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1016/j.jcrysgro.2008.10.107
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleJournal of Crystal Growth
ISSN0022-0248
Volume311
Issue7
Pages18031806; # of pages: 4
Subjectlow-dimensionalstructures; nanomaterials; molecular beam epitaxy; semiconducting gallium arsenide
AbstractBroadband superluminescent diodes incorporating multiple layers of InAs quantum dots (QDs), where the dots height was deliberately varied from one layer to another have been grown and characterized. We used the indium-flush process to accurately control the emission energy of each layer of dots, enabling us to reliability and predictably engineer the bandwidth of the overlapped layers. Photoluminescence spectrum of four combined layers of QDs with full-width at half-maximum of 125 nm at peak wavelength energy of 1.06 μm was obtained. A 3 dB bandwidth emission spectrum of 80 nm and output power of 1 mW was obtained under CW operation mode at room temperature.
Publication date
PublisherElsevier
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number21276872
Export citationExport as RIS
Report a correctionReport a correction
Record identifier55865901-91c2-4caa-9d1f-e564507b883a
Record created2015-10-28
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)