Phonons on GaN(110)

  1. Get@NRC: Phonons on GaN(110) (Opens in a new window)
DOIResolve DOI:
AuthorSearch for: ; Search for: ; Search for: ; Search for:
Journal titleApplied Physics Letters
Pages33223324; # of pages: 3
Subjectgallium compounds; III-V semiconductors; lattice constants; pseudopotential methods; surface phonons; wide band gap semiconductors
AbstractWe present results of adiabatic bond-charge model calculations for the vibrational properties of the GaN(110) surface using electronic and structural data obtained from a first-principles pseudopotential method. It is found that in order to relate the energy locations of optical phonon modes on this surface with corresponding modes on nonnitride III�V(110) and II�VI(110) surfaces, it is necessary to consider scaling of results with the lattice constant in addition to the reduced mass.
Publication date
AffiliationNational Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12338426
Export citationExport as RIS
Report a correctionReport a correction
Record identifier558d8a7c-fe06-407c-9649-4803746e9a2e
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)