The fine structure of a triexciton in single InAs/GaAs quantum dots

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TypeArticle
Journal titleActa Physica Polonica A
ISSN0587-4246
Volume122
Issue6
Pages991993; # of pages: 3
SubjectElectrons and holes; Emission lines; Experimental studies; Fine structure splitting; Fine structures; InAs/GaAs quantum dots; Linearly polarized; Low temperatures; Microphotoluminescence; Neutral excitons; P-shell; Self-assembled; Electromagnetic wave emission; Excitons; Optical anisotropy; Optical properties; Polarization; Semiconductor quantum dots
AbstractResults of experimental study of multiexcitonic emission related to the p-shell of single self-assembled InAs/GaAs quantum dots are presented. Optical properties of a first emission line to appear from the p-shell of a strongly excited quantum dots are investigated using low-temperature polarization- sensitive micro-photoluminescence measurements. The emission line is attributed to the recombination of a complex of three electrons and holes confined in a dot (neutral triexciton), 3X. It is found that the emission consists of two linearly polarized components and the fine structure splitting is larger than the respective splitting of a neutral exciton. The optical anisotropy of the 3X emission is related to the anisotropy of the quantum dot localizing potential. The axis of the 3X optical anisotropy changes from dot to dot covering broad range within ±50 degrees with respect to the axis defined by the optical anisotropy of a neutral exciton (X). Possible origin of the deviation is discussed.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21269377
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Record identifier5683198b-d0b9-418b-ad44-3fa3745cac5b
Record created2013-12-12
Record modified2016-05-09
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