Electron beam patterning with sub-2 nm line edge roughness

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DOIResolve DOI: http://doi.org/10.1116/1.1856466
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TypeArticle
Journal titleJournal of Vacuum Science and Technology B
ISSN0734-211X
Volume23
Issue1
Pages271273; # of pages: 3
Subjectelectron beam lithography; nanolithography; sputter etching; transmission electron microscopy
AbstractNegative tone patterns were created by polymer-contamination writing in a transmission electron microscope. Typical line edge roughness of the polymer lines was found to be below 1 nm. The patterns were transferred to bismuth films using an anisotropic ion etch, resulting in final bismuth line edge roughness less than 2 nm. This low roughness was achieved by growing the bismuth film such that the same crystallographic planes were exposed to the etching flux of ions.
Publication date
PublisherAmerican Vacuum Society
LanguageEnglish
AffiliationNational Research Council Canada; National Institute for Nanotechnology
Peer reviewedYes
NRC number128
NPARC number12338129
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Record identifier5705872c-f6ff-495a-97a1-aae0b8ae2d4b
Record created2009-09-10
Record modified2016-05-09
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