1.5 μm to 0.87 μm optical upconversion using wafer fusion technology

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DOIResolve DOI: http://doi.org/10.1116/1.1689300
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TypeArticle
Journal titleJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Volume22
Issue3
Pages788791; # of pages: 4
Subjectaluminium compounds; gallium arsenide; gallium compounds; III-V semiconductors; indium compounds; integrated optoelectronics; light emitting diodes; optical frequency conversion; photodetectors; p-i-n photodiodes; semiconductor devices; wafer bonding
AbstractWafer fusion is an important processing tool for heterogenous integration of different materials regardless of their lattice constants. It removes the limitation of conventional epitaxialgrowth techniques and introduces a design parameter for achieving high performance semiconductor devices. In this article, we propose and demonstrate a 1.5 μm to 0.87 μm optical upconversion device based on wafer fusion technology. The device consists of an In0.53Ga0.47As(InGaAs)p-i-nphotodetector and an AlGaAs/GaAs light-emitting diode(LED) integrated with wafer fusion. Incoming 1.5 μm light is absorbed by the InGaAsphotodetector and generates a photocurrent. The resultant photocurrent drives the GaAsLED, which emits radiation at 0.87 μm. An internal quantum efficiency of 20% and an external quantum efficiency of 0.27% was obtained at room temperature. The results show the potential of the upconversion device in near-infrared imaging applications.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327600
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Record identifier57b9c79c-391b-447f-bf64-edadfb01f67b
Record created2009-09-10
Record modified2016-05-09
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