Tuning the electrically evaluated electron Landé g factor in GaAs quantum dots and quantum wells of different well widths

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.90.235310
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TypeArticle
Journal titlePhysical Review B - Condensed Matter and Materials Physics
ISSN1098-0121
Volume90
Issue23
Article number235310
AbstractWe evaluate the Landé g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Landé electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magnetotransport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Landé electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs.
Publication date
PublisherAmerican Physical Society
LanguageEnglish
AffiliationInformation and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21275519
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Record identifier5866e9d8-d244-4cf3-9f80-6e71a61623d9
Record created2015-07-14
Record modified2016-05-09
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