Positioned growth and spectroscopy of InP nanowires containing single InAsP quantum dots

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TypeArticle
Proceedings titleConference Proceedings - International Conference on Indium Phosphide and Related Materials
Conference2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, 22 May 2011 through 26 May 2011, Berlin
ISSN1092-8669
ISBN9781457717536
Article number5978401
SubjectAu particles; Catalyst-free; e-Beam lithography; Growth conditions; Growth modes; InP; InP wafers; Optical emissions; P-shell; Selective area growth; VLS growth; Catalysis; Catalysts; Chemical beam epitaxy; Indium phosphide; Nanowires; Semiconductor growth; Silicon compounds; Semiconductor quantum dots
AbstractWe describe two different approaches to growing precisely positioned and diameter controlled InP nanowires on InP wafers. Both of these approaches utilize the selective area growth capabilities of Chemical Beam Epitaxy (CBE), one using the Au catalysed Vapour-Liquid-Solid (VLS) growth mode, the other being catalyst-free. In both cases a SiO 2 masked substrate is used with the nanowire positions determined through e-beam lithography. In VLS growth the nanowire diameter is controlled by the size of the Au particle, whereas when catalyst-free the diameter is that of the opening in the SiO 2 mask. The orientation of the nanowires is also different, <111>B when using Au particles and <111>A when catalyst- free. For the catalysed growth the effect of the Au particle can be turned off by modifying growth conditions allowing the nanowire to be clad, dramatically enhancing the optical emission from InAsP quantum dots grown inside the nanowire. Photoluminescence from individual InAsP quantum dots is observed, and it is shown that the s- to p-shell splitting can be reproducibly controlled through the nanowire diameter. © VDE VERLAG GMBH.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21271074
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Record identifier58981bec-fe52-48df-a59f-b53422c9dc85
Record created2014-03-24
Record modified2016-05-09
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