A novel method for extracting the linewidth broadening factor of semiconductor diode lasers

DOIResolve DOI: http://doi.org/10.1364/FIO.2015.FTh2G.5
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TypeArticle
Proceedings titleFrontiers in Optics 2015
ConferenceFrontiers in Optics 2015 (Optics and Photonics of Disordered Systems II (FTh2G) session), October 18-22, 2015, San Jose, California, USA
ISBN978-1-943580-03-3
Article numberFTh2G.5
AbstractA novel experimental technique for extracting the linewidth broadening factor of semiconductor lasers is proposed. This approach is applicable to any types of diode lasers, both below- and above-threshold, and is insensitive to thermal effects.
Publication date
PublisherOSA
PlaceWashington, D.C.
LanguageEnglish
AffiliationInformation and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number23000658
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Record identifier590863a4-8a6c-4cc3-9cc2-0469f3fc3e9b
Record created2016-08-18
Record modified2016-08-18
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