Transmission electron microscopy characterization of InAlSb/InSb bilayers and superlattices

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DOIResolve DOI: http://doi.org/10.1016/S0968-4328(96)00048-0
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TypeArticle
Journal titleMicron
Volume28
Issue2
Pages175183; # of pages: 9
Subjectbilayer; crystal growth; diffraction contrast; electron diffraction; electron microscopy; high resolution; InAlSb; InSb; magnetron sputter epitaxy; semiconductor; superlattice
AbstractHigh quality InAlSb/InSb bilayers and superlattices have been grown by magnetron sputter epitaxy and the physical structure has been characterized by transmission electron microscopy. It was found that single layers of InAlSb, whose thicknesses greatly exceeded the equilibrium critical thickness, could be grown coherently on (001) InSb for Al concentrations approaching 13-15%. Also, it was observed that planar defects increased in density for both the bilayer and superlattice structures as the Al concentration increased.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Fuel Cell Innovation; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12327315
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Record identifier59b66e27-c422-4e43-9940-cf0b51cab5e2
Record created2009-09-10
Record modified2016-05-09
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