Influence of interface potential on the effective mass in Ge nanostructures

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DOIResolve DOI: http://doi.org/10.1063/1.4918549
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TypeArticle
Journal titleJournal of applied physics
ISSN0021-8979
Volume117
Article number154304
Pages# of pages: 9
Subjectnanostructure
AbstractThe role of the interface potential on the effective mass of charge carriers is elucidated in this work. We develop a new theoretical formalism using a spatially dependent effective mass that is related to the magnitude of the interface potential. Using this formalism, we studied Ge quantum dots (QDs) formed by plasma enhanced chemical vapour deposition (PECVD) and co-sputtering (sputter). These samples allowed us to isolate important consequences arising from differences in the interface potential. We found that for a higher interface potential, as in the case of PECVD QDs, there is a larger reduction in the effective mass, which increases the confinement energy with respect to the sputter sample. We further understood the action of O interface states by comparing our results with Ge QDs grown by molecular beam epitaxy. It is found that the O states can suppress the influence of the interface potential. From our theoretical formalism, we determine the length scale over which the interface potential influences the effective mass.
Publication date
PublisherAIP Publishing
LanguageEnglish
AffiliationMeasurement Science and Standards; National Research Council Canada
Peer reviewedYes
Identifier1089-7550
NPARC number21274907
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Record identifier59cecde0-0c10-4f79-8678-07143d995b69
Record created2015-04-27
Record modified2016-05-09
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