Growth and characterization of GaN thin films by magnetron sputter epitaxy

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DOIResolve DOI: http://doi.org/10.1116/1.581059
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TypeArticle
Journal titleJournal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
Volume16
Pages786789
AbstractSingle crystal epitaxial gallium nitride films on GaN buffer layers were grown on (0001) sapphire using magnetron sputter epitaxy. The films were characterized using x-ray diffraction, photoluminescence, scanning electron microscopy and transmission electron microscopy. In the layers investigated thus far, the optimum buffer layer had a thickness of 500 Å at a growth temperature of 550 °C, while the optimum growth temperature range for the active GaN epilayer was found to be 900 °C–950 °C. The growth rates for the buffer layer and GaN epilayer were 0.2 and 0.35 μm/h, respectively. In general, photoluminescence studies showed emission from a broad defect band centered around 2.4 eV and a strong exciton peak at 3.48 eV. The exciton/defect intensity ratio was strongly dependent on crystal quality at constant excitation intensity. The transmission electron microscopy studies revealed highly epitaxial GaN films, showing a kind of columnar growth structure. GaN films grown at 950 °C appeared to have the best structural quality.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12327977
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Record identifier5aecf723-2df1-4f38-80b4-e679eeadb626
Record created2009-09-10
Record modified2017-03-28
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