Electrical-Stress Effects and Device Modeling of 0.18mm RF MOSFETS

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DOIResolve DOI: http://doi.org/10.1109/TED.2006.870284
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TypeArticle
Journal titleIEEE Transactions on Electron Devices
Volume53
Issue4
Pages636642; # of pages: 7
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744711
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Record identifier5d461c0f-e473-4d8c-91e1-4145689e4d2e
Record created2009-10-27
Record modified2016-05-09
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