Carrier dynamics in type-II GaAsSb/GaAs quantum wells

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DOIResolve DOI: http://doi.org/10.1088/0953-8984/24/18/185801
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TypeArticle
Journal titleJournal of Physics Condensed Matter
ISSN0953-8984
Volume24
Issue18
Article number185801
AbstractTime-resolved photoluminescence (PL) characteristics of type-II GaAsSb/GaAs quantum wells are presented. The PL kinetics are determined by the dynamic band bending effect and the distribution of localized centers below the quantum well band gap. The dynamic band bending results from the spatially separated electron and hole distribution functions evolving in time. It strongly depends on the optical pump power density and causes temporal renormalization of the quantum well ground-state energy occurring a few nanoseconds after the optical pulse excitation. Moreover, it alters the optical transition oscillator strength. The measured PL lifetime is 4.5ns. We point out the critical role of the charge transfer processes between the quantum well and localized centers, which accelerate the quantum well photoluminescence decay at low temperature. However, at elevated temperatures the thermally activated back transfer process slows down the quantum well photoluminescence kinetics. A three-level rate equation model is proposed to explain these observations.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number21269168
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Record identifier5df2156c-305c-47df-8bed-3de9f4780245
Record created2013-12-12
Record modified2016-05-09
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