Polarization insensitive quantum well optoelectronic devices using quantum well shape modification

DOIResolve DOI: http://doi.org/10.1117/12.265364
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Proceedings titleEmerging Components and Technologies for All-Optical Networks II
Series titleSPIE digital library; Volume 123
ConferenceEmerging Components and Technologies for All-Optical Photonic Systems II, Nov. 18, 1996, Boston, MA
Pages184192; # of pages: 9
AbstractPolarization insensitive 1.5 micrometer QW optical amplifiers, modulators, and detectors were fabricated using a novel, simple, post-growth, integratable technique. The process utilizes ion-implantation-induced, spatially selective, quantum well (QW) shape modification. A simple model shows that if the interdiffusion rate of the anions is larger than that of the cations, the blue shift in the ground state heavy hole transition energy after implantation and annealing is greater than the light hole state blue shift, merging the two bands and thus eliminating the difference between the TE (transverse electric) and TM (transverse magnetic) waveguide propagation modes. Current- voltage measurements indicate that junction characteristics are well maintained after processing. This simple technique for fabricating discrete polarization insensitive optoelectronic devices is readily extended to the monolithic integration of such devices along with other passive and active optoelectronic devices and provides a pathway to practical photonic integrated circuits.
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12339062
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Record identifier5e731cdf-badc-46de-9c4e-1098d5567117
Record created2009-09-11
Record modified2016-05-09
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