Indium bump array fabrication on small CMOS circuit for flip-chip bonding

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DOIResolve DOI: http://doi.org/10.1088/1674-4926/32/11/115014
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TypeArticle
Journal titleJournal of Semiconductors
ISSN1674-4926
Volume32
Issue11
Article number115014
Subjectarray; CMOS chips; CMOS circuits; Edge bead; Flip chip; Flip-chip bonding; GaAs/AlGaAs; indium bump; Indium bumps; small-size; Spatial light modulators; Via hole; CMOS integrated circuits; Flip chip devices; Light modulators; Photoresists; Semiconductor quantum wells; Indium
AbstractWe demonstrate a novel method for indium bump fabrication on a small CMOS circuit chip that is to be flip-chip bonded with a GaAs/AlGaAs multiple quantum well spatial light modulator. A chip holder with a via hole is used to coat the photoresist for indium bump lift-off. The 1000 μm-wide photoresist edge bead around the circuit chip can be reduced to less than 500 μm, which ensures the integrity of the indium bump array. 64 × 64 indium arrays with 20 μm-high, 30 μm-diameter bumps are successfully formed on a 5 × 6.5 mm2 CMOS chip. © 2011 Chinese Institute of Electronics.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21271426
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Record identifier5e98f7a8-bd29-4039-b125-47020e6e8a9f
Record created2014-03-24
Record modified2016-05-09
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