Temperature dependence of photoresponse in p-type GaAs/AlxGa1-xAs multiple quantum wells: Theory and experiment

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.61.13798
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TypeArticle
Journal titlePhys. Rev. B
Physical Review B
Volume61
Issue20
Pages13798–; # of pages: 1
AbstractBound-to-continuum (BC) absorption and photoresponse in p-type quantum well infrared photodetectors are investigated theoretically and experimentally as a function of polarization and temperature. Using the 8×8 envelope-function approximation model, the quantum well electronic structure and wave functions are calculated and then the BC absorption curves are obtained on an absolute scale as a function of photon energy, light polarization, and temperature. Since optimum absorption obtains for structures with the second light-hole (LH2) state at the top of the well, a nonoptimized long-wavelength infrared structure and an optimized mid-wavelength infrared structure were grown by molecular-beam epitaxy and their characteristics measured to test the theory. Whereas the optimized sample has the LH2 resonance at the top of the well, the nonoptimized sample has light-hole quasibound states within the heavy-hole continuum. This different placement of the light-hole states produces a different temperature and polarization dependence of the absorption process in these samples. Our temperature-dependent photoresponse measurements corroborate most of the theoretical findings with respect to the long-wavelength threshold, shape, and polarization and temperature dependence of the spectra.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12329052
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Record identifier5f793304-e17b-4b1a-908c-ba3d5b9bcc0b
Record created2009-09-10
Record modified2016-05-09
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