Electronic temperature in phonon-photon-phonon terahertz quantum cascade devices with high-operating temperature performance

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DOIResolve DOI: http://doi.org/10.1117/12.2006874
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TypeArticle
Proceedings titleQuantum Sensing and Nanophotonic Devices X
Series titleProceedings of SPIE; Volume 8631
ConferenceQuantum Sensing and Nanophotonic Devices X, February 3-7, 2013, San Francisco, CA, USA
ISSN0277-786X
ISBN9780819494009
Article number86312C
SubjectBand-to-band photoluminescence; Electronic distribution; Electronic temperature; Experimental measurements; Lasing conditions; Quantum-cascade devices; Temperature performance; Terahertz quantum-cascade lasers; Cascade connections; Nanophotonics; Photoluminescence; Photoluminescence spectroscopy; Photons; Semiconductor quantum wells; Phonons
AbstractWe report on the experimental measurement of active region lattice (T L) and electronic temperatures (T e) in terahertz quantum cascade devices based on the phonon-photon-phonon scheme, by means of microprobe band-to-band photoluminescence spectroscopy. Three mesa devices, differing for doping region and number of quantum wells composing the active region, have been investigated. With device on, under band alignment for lasing condition, we measured a difference (Te - TL) ∼ 40 K much smaller than the typical value (Te - TL ∼ 100 K) reported for resonantphonon THz QCLs. © 2013 SPIE.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC)
Peer reviewedYes
NPARC number21270745
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Record identifier6061d98f-423c-4f07-bcb9-c755ada06ffa
Record created2014-02-17
Record modified2017-09-13
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