High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers

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DOIResolve DOI: http://doi.org/10.1016/j.jcrysgro.2004.08.089
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TypeArticle
Journal titleJournal of Crystal Growth
Volume272
Issue1-4
Pages300304; # of pages: 5
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744252
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Record identifier60ab4c1d-4d04-4978-b092-eae209c27239
Record created2009-10-27
Record modified2016-05-09
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