High Work Function IrxSi Gates on HfAlON p-MOSFETs

Download
  1. Get@NRC: High Work Function IrxSi Gates on HfAlON p-MOSFETs (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1109/LED.2005.862687
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleIEEE Electron Device Letters
Volume27
Issue2
Pages9092; # of pages: 3
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12743895
Export citationExport as RIS
Report a correctionReport a correction
Record identifier60f88482-281b-4059-8012-4fa89f4870ec
Record created2009-10-27
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)