High resolution SIMS and analytical TEM evaluation of alumina scales on b-NiAl containing Zr or Y

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DOIResolve DOI: http://doi.org/10.1007/BF01046883
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TypeArticle
Journal titleOxidation of Metals
Volume46
Issue1-2
Pages3749; # of pages: 13
Subjecthigh-resolution SIMS; analytical TEM; alumina scales; Zr and Y segregation
AbstractHigh-resolution SIMS and TEM have been used to evaluate growth processes and interfacial segregation occurring in -Al2O3 scales grown at 1200°C on -NiAl containing zirconium or yttrium.18O/SIMS shows that the extent of aluminum diffusion occurring during -Al2O3 growth is reduced by the presence of these alloying elements, which are seen by SIMS imaging as oxide particles within the scale. STEM/EDS of the same oxide scales show that zirconium and yttrium also segregated to the oxide-alloy interface to the extent, respectively, of 0.15 and 0.07 of a monolayer and to oxide grain boundaries (0.2 monolayer). The complementary information provided by SIMS, TEM, and STEM provides a better understanding of the role of reactive elements in modifying scale-growth processes.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327442
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Record identifier613a665b-7a39-4d05-bcae-75722417b67b
Record created2009-09-10
Record modified2016-05-09
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