Demonstration of cascade process in InAs/GaInSb/AlSb mid-infrared light emitting devices

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DOIResolve DOI: http://doi.org/10.1063/1.121037
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TypeArticle
Journal titleApplied Physics Letters
Volume72
Issue12
Pages14951497; # of pages: 3
Subjectaluminium compounds; electroluminescent devices; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; semiconductor quantum wells
AbstractWe demonstrate the cascade process in mid-infrared electroluminescent InAs/GaInSb/AlSb multi-quantum-well devices. We report the proportional relation between the emitted optical power and the number of periods. This observed scaling is associated with the sequential transport of electrons from one active region to the next situated downstream in potential energy through the injection region. Deviations from this exact scaling are correlated with the variation of the wafer-to-wafer structural quality.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences; NRC Institute for National Measurement Standards; NRC Genomics and Health Initiative
Peer reviewedNo
NPARC number12327604
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Record identifier614408ff-f1fd-4684-be02-18ac4f83b2d8
Record created2009-09-10
Record modified2016-05-09
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