Terahertz generation using implanted InGaAs photomixers and multi-wavelength quantum dot lasers

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DOIResolve DOI: http://doi.org/10.3786/nml.v4i1.p10-13
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TypeArticle
Journal titleNano-Micro Letters
ISSN2150-5551
Volume4
Issue1
Pages1013; # of pages: 4
AbstractWe report on a study of terahertz (THz) generation using implanted InGaAs photomixers and multi-wavelength quantum dot lasers. We carry out InGaAs materials growth, optical characterization, device design and fabrication, and photomixing experiments. This approach is capable of generating a comb of electromagnetic radiation from microwave to terahertz. For shortening photomixer carrier lifetime, we employ proton implantation into an epitaxial layer of lattice matched InGaAs grown on InP. Under a 1.55 μm multimode InGaAs/InGaAsP quantum dot laser excitation, a frequency comb with a constant frequency spacing of 50 GHz generated on the photomixer is measured, which corresponds to the beats of the laser longitudinal modes. The measurement is performed with a Fourier transform infrared spectrometer. This approach affords a convenient method to achieve a broadband multi-peak coherent THz source.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21269389
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Record identifier621d0852-edc8-4a87-bc0f-2240e8e9ee6a
Record created2013-12-12
Record modified2016-05-09
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