Analysis of doping superlattices grown by Si MBE

DOIResolve DOI: http://doi.org/10.1117/12.947298
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TypeArticle
Proceedings titleQuantum Well and Superlattice Physics II
Series titleProceedings of SPIE; Volume 0943
ConferenceQuantum well and superlattice physics II, 17-18 March 1988, Newport Beach, California, USA
ISBN0892529784
Pages102106; # of pages: 5
AbstractSilicon p-n junctions and doping superlattices nipi's have been grown by molecular beam epitaxy (MBE) using an arsenic ion beam for n doping and a boric oxide source for p doping. The layers were characterised by secondary ion mass spectrometry (SIMS) and the electrical characteristics of nipi's and individual junctions were measured. The superlattices were evaporated through a silicon mask to create nini and pipi regions at the edges of mesas to which selective contacts of Au/Sb and PtSi were made to the n and p layers respectively. Our structures typically had from 10 to 20 periods with very thin or nonexistent i regions between the doped layers which were varied in the range 30 to 100 nm and doped to 5x1017-5x1018 at./cm3. The conductivity of the p layers was measured through split contacts after illumination with 632.8 nm laser pulses to determine the effective recombination lifetime. Lifetimes of 245 ms were measured at 85°K and factors limiting the achievement of longer lifetimes were investigated.
Publication date
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards; NRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NRC number1096
NPARC number5763650
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Record identifier6293e109-4e9d-4aeb-9072-1dad864f39e1
Record created2009-03-29
Record modified2016-05-09
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